nkbahety
05-13-2008, 04:32 PM
MBM29DL324BE80TN DESCRIPTION
MBM29DL324BE80TN datasheet and PDF (http://www.chinaicmart.com/suppliers/612/MBM29DL324BE80TN.html) check from MBM29DL324BE80TN Selling Leads,MBM29DL324BE80TN Datasheet PDF (http://www.chinaicmart.com/suppliers/612/MBM29DL324BE80TN.html)
The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank.
The MBM29DL32XTE/BE are pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Typically, each sector can be programmed and verified in about 0.5 seconds. A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.) The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29DL32XTE/BE are erased when shipped from the factory.
MBM29DL324BE80TN PDF check from http://www.chinaicmart.com/suppliers/61 ... E80TN.html (http://www.chinaicmart.com/suppliers/612/MBM29DL324BE80TN.html)
MBM29DL324BE80TN datasheet and PDF (http://www.chinaicmart.com/suppliers/612/MBM29DL324BE80TN.html) check from MBM29DL324BE80TN Selling Leads,MBM29DL324BE80TN Datasheet PDF (http://www.chinaicmart.com/suppliers/612/MBM29DL324BE80TN.html)
The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank.
The MBM29DL32XTE/BE are pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Typically, each sector can be programmed and verified in about 0.5 seconds. A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.) The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29DL32XTE/BE are erased when shipped from the factory.
MBM29DL324BE80TN PDF check from http://www.chinaicmart.com/suppliers/61 ... E80TN.html (http://www.chinaicmart.com/suppliers/612/MBM29DL324BE80TN.html)