Features
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
3RD generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
Low thermal resistance due to reduced chip thickness
Low drain to tab capacitance(<30pF)
Applications Switched Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC)
Welding
Inductive Heating
Advantages Easy assembly: no screws or isolation foils required
Space savings
High power density
COOLMOS is a trademark of Infineon Technology.
pdf data: http://www.chinaicmart.com/suppliers/457/IXKC13N80C.html
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
3RD generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
Low thermal resistance due to reduced chip thickness
Low drain to tab capacitance(<30pF)
Applications Switched Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC)
Welding
Inductive Heating
Advantages Easy assembly: no screws or isolation foils required
Space savings
High power density
COOLMOS is a trademark of Infineon Technology.
pdf data: http://www.chinaicmart.com/suppliers/457/IXKC13N80C.html